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Not for new designs
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Combi Packs Short Circuit SOA Capability
Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Mounting torque Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, T J = 125C, RG = 82 Clamped inductive load, L = 100 H VGE = 15 V, V CE = 360 V, TJ = 125C RG = 82 , non repetitive TC = 25C Maximum Ratings 600 600 20 30 40 20 80 ICM = 40 @ 0.8 VCES 10 150 -55 ... +150 150 -55 ... +150 V V V V A A A A s W C C C
VCES IXSH 20 N60U1 IXSH 20 N60AU1 600 V 600 V
IC25 40 A 40 A
VCE(sat) 2.5 V 3.0 V
TO-247 AD
G
C
E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Features International standard package JEDEC TO-247 AD High frequency IGBT with guaranteed Short Circuit SOA capability IGBT and anti-parallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses MOS Gate turn-on - drive simplicity
q q q q q q
1.13/10 Nm/lb.in. 6 300 g C
Applications Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 3.5 TJ = 25C TJ = 125C 6.5 500 8 100 20N60U1 20N60AU1 2.5 3.0 V V A mA nA V V
q q q q
BVCES VGE(th) ICES I GES VCE(sat)
IC IC
= 1.75 mA, VGE = 0 V = 1.5 mA, VCE = VGE
q
AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
Advantages
q
q
q q
Space savings (two devices in one package) Easy to mount with 1 screw (isolated mounting screw hole) Reduces assembly time and cost High power density
91770D (4/96)
IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670
IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627
IXSH 20N60U1 IXSH 20N60AU1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 6 7 65 1800 VCE = 25 V, VGE = 0 V, f = 1 MHz 250 45 90 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 H, VCE = 0.8 VCES , RG = 39 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 H VCE = 0.8 VCES , RG = 39 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher T J or increased RG 20N60U1 20N60AU1 20N60U1 20N60AU1 9 3 40 65 100 200 450 20N60U1 20N60AU1 350 2.5 100 200 1 1000 1000 600 5 120 55 80 S A pF pF pF nC nC nC ns ns ns ns ns mJ ns ns mJ ns ns ns mJ mJ
1 = Gate 2 = Collector 3 = Emitter Tab = Collector
TO-247 AD Outline
gfs IC(on) Cies Coes Cres Qg Q ge Q gc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % VGE = 15 V, VCE = 10 V
0.83 K/W 0.25 K/W
Reverse Diode (FRED) Symbol VF I RM trr RthJC Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.6 10 150 35 V A ns ns
IF = IC90, VGE = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IC90, VGE = 0 V, -diF /dt = 240 A/s VR = 360 V TJ = 125C IF = 1 A; -di/dt = 100 A/s; VR = 30 V TJ = 25C
50
1 K/W
IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: 4,835,592 4,881,108 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXSH 20N60U1 IXSH 20N60AU1
Fig. 1 Saturation Characteristics
40
TJ = 25C VGE = 15V
Fig. 2
70
TJ = 25C
Output Characterstics
13V
60
VGE =15V
30
IC - Amperes
IC - Amperes
50 40 30 20
11V 13V
20
11V
10
9V
10
7V
9V 7V
0 0 1 2 3 4 5
0 0 2 4 6 8 10 12 14
16
18
20
VCE - Volts
VCE - Volts
Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage
10 9 8 7
TJ = 25C
Fig. 4
1.7
Temperature Dependence of Output Saturation Voltage
IC = 40A
VCE(sat) - Normalized
IC = 10A
IC = 20A
IC = 40A
1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50
V GE = 15V
VCE - Volts
6 5 4 3 2 1 0 8 9 10 11 12 13 14 15
I C = 20A
IC = 10A
-25
0
25
50
75
100
125
150
VGE - Volts
TJ - Degrees C
Fig. 5 Input Admittance
40
VCE = 10V
1.3
Fig. 6
Temperature Dependence of Breakdown and Threshold Volt.
BV / VGE(th) - Normalized
35 30
1.2
BVCES IC = 3mA
IC - Amperes
25 20 15
TJ = 125C
1.1 1.0
0.9 VGE(th) IC = 1.5mA 0.7
10 5 0 5 6 7 8 9
T J = 25C T J = - 40C
0.8
10
11
12
13
14
15
-50
-25
0
25
50
75
100
125
150
VGE - Volts
TJ - Degrees C
IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670
IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627
IXSH 20N60U1 IXSH 20N60AU1
Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current
600 500
TJ = 125C RG = 22
Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG
6 5 600 500
T J = 125C IC = 20A tfi (-A) hi-speed
6 5 4 3
E off (-A) hi-speed
tfi - nanoseconds
tfi - nanoseconds
Eoff - millijoules
400 300 200 100 0
tfi (-A) hi-speed Eoff (-A) hi-speed
4 3 2 1 0
400 300 200 100 0
2 1 0
0
10
20
30
40
0
20
40
60
80
100
120
IC - Amperes
Rg - Ohms
Fig.9 Gate Charge Characteristic Curve
15 12 9 6 3 0
IC = 20A VCE = 300V
Fig.10
100
Turn-Off Safe Operating Area
TJ = 125C
10
RG = 10 dV/dt < 6V/ns
IC - Amperes
VGE - Volts
1
0.1
0.01 0 25 50 75 100 0 100 200 300 400 500 600
Qg - nanocoulombs
VCE - Volts
Fig.11 Transient Thermal Impedance
1
Thermal Response - K/W
D=0.5 D=0.2
0.1
D=0.1 D=0.05 D=0.02 D=0.01 Single Pulse
D = Duty Cycle
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
Eoff - millijoules
IXSH 20N60U1 IXSH 20N60AU1
Fig.12 Maximum Forward Voltage Drop Recovery Time tfr 100
80
TJ = 150C
Fig.13
25 20
Peak Forward Voltage VFR and Forward
1000 800
VFR
T J = 125C IF = 37A
Current - Amperes
60 40 20 0 0.5
T J = 100C
15 10 5
tfr
600 400 200 0 600
TJ = 25C
0 1.0 1.5 2.0 2.5 0 100 200 300 400 500
Voltage Drop - Volts
diF /dt - A/s
Fig.14 Junction Temperature Dependence off IRM and Qr
1.4 1.2 1.0 0.8
IRM
Fig.15
4
TJ = 100C VR = 350V
Reverse Recovery Chargee
Qr - nanocoulombs
Normalized IRM /Qr
3
IF = 30A
max.
2
typ. IF = 60A
0.6 0.4 0.2 0.0 0
Qr
1
IF = 30A IF = 15A
0 40 80 120 160 1 10 100 1000
TJ - Degrees C
diF /dt - A/s
Fig.16 Peak Reverse Recovery Current
40
TJ = 100C VR = 350V IF = 30A
max.
Fig.17
0.8
IF = 30A
max.
Reverse Recovery Time
T J = 100C VR = 350V
trr - nanoseconds
30
0.6
typ. IF = 60A
IRM - Amperes
typ. IF = 60A
20
IF = 30A IF = 15A
0.4
IF = 30A IF = 15A
10
0.2
0 200 400 600
0.0 0 200 400 600
diF /dt - A/s
diF /dt - A/s
IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670
IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627
tfr - nanoseconds
VFR - Volts
IXSH 20N60U1 IXSH 20N60AU1
Fig.18 Diode Transient Thermal resistance junction to case
1.00
RthJC - K/W
0.10
0.01 0.001
0.01
0.1
1
Pulse Width - Seconds

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